International Journal of Electrical, Electronics and Data Communication (IJEEDC)
eISSN:2320-2084 , pISSN:2321-2950
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Nov. 2022
Submitted Papers : 80
Accepted Papers : 10
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Acc. Perc : 12%
Issue Published : 116
Paper Published : 1605
No. of Authors : 4406
  Journal Paper

Paper Title :
Characterization And Simulation Of Sige Mosfet

Author :Swati Bairagi, Suman Kumar Choudhary, Virendra Ramesh Koli

Article Citation :Swati Bairagi ,Suman Kumar Choudhary ,Virendra Ramesh Koli , (2015 ) " Characterization And Simulation Of Sige Mosfet " , International Journal of Electrical, Electronics and Data Communication (IJEEDC) , pp. 44-46, Volume-3, Issue-1

Abstract : Strain in silicon is a powerful technology of increasing MOSFET performance. It has improved carrier transport properties (mobility). This relatively new technology offers opportunities in mixed signal circuits and analog circuits IC design and manufacture. Strained silicon is a layer of silicon in which Si atoms are stretched beyond their normal interatomic distance. This is done by putting layer of Si over substrate of Silicon germanium (SiGe). Moving silicon atoms further apart reduces the atomic force which interferes with movement of electrons. We have explored the SiGe MOSFET to replace the currently planar MOSFET’s. Gate length of this device is 0.1µm and channel width is 0.022µm. We have used General Purpose Semiconductor Simulator and obtained 3D plots. Also we have used TCAD tool Athena and Atlas Simulator and determined I-V characteristics, C-V characteristics and Id-Vg characteristics.

Type : Research paper

Published : Volume-3, Issue-1


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