Paper Title :Luminescence Lifetime Measurement on Gaas Material for Optoelectronic Devices
Author :Kathy Kyaw Min, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe
Article Citation :Kathy Kyaw Min ,Hla Myo Tun ,Zaw Min Naing ,Win Khaing Moe ,
(2018 ) " Luminescence Lifetime Measurement on Gaas Material for Optoelectronic Devices " ,
International Journal of Electrical, Electronics and Data Communication (IJEEDC) ,
pp. 11-14,
Volume-6,Issue-4
Abstract : The paper presents the lifetime measurement on GaAs material for optoelectronic devices. The energy dispersion
of GaAs is considered for analyzing the material characteristics and Fermi-dirac function for that material for performance
evaluation for optoelectronic devices. And then we investigated the energy bandgap of GaAs, Si, and Geas a function of
temperature for confirmation. The lifetime measurements for GaAs material with 2.32-2.42eV with 267nm and 400nm
wavelength and 2.53-2.63eV with 267nm and 400nm wavelength with time-resolved photoluminescence measurement with
the help of MATLAB are analyzed in this paper. The simulation results have been confirmed by the experimental results for
measurements.
Index terms - Lifetime Measurement, GaAs Material, Optoelectronic Devices, MATLAB, Band Structure Engineering,
Fermi-Dirac Function.
Type : Research paper
Published : Volume-6,Issue-4
DOIONLINE NO - IJEEDC-IRAJ-DOIONLINE-11946
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Copyright: © Institute of Research and Journals
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Published on 2018-06-26 |
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