Analysis of Transmission and Reflection Pulse on Metal/Semiconductor Interface with PML and MUR Boundary Condition for Carrier Dynamics Effects
The paper mainly emphasizes on the analysis of transmission and reflection pulse on metal/semiconductor
interface with PML and MUR boundary condition for carrier dynamics effects. The research problem in this study is the
carrier dynamic effects on metal/semiconductor interface for high performance semiconductor device. The research solution
is to make the software model with finite difference time domain (FDTD) solution for transmission and reflection pulse
between metal and semiconductor interface for carrier dynamics effects. The objective of this study is to find the quantum
mechanics understanding on interface engineering for fabricating the high performance device for future semiconductor
technology development. The analysis was carried out with the help of MATLAB. The simulation results confirm that the
results on transmission and reflection pulses between interface of metal and semiconductor for carrier dynamics effects could
meet the results of experimental studies.
Keywords - Transmission, Reflection, Metal/Semiconductor Interface, PML, MUR, Carrier Dynamics Effects, FDTD.