Paper Title
Comparative Study of Temperature Characteristics of Color GAN Light-Emitting Diodes
Abstract
Temperature dependent light-emitting and current-voltage characteristics of multi-quantum well (MQW)
InGaN/GaN LEDs in different colors were measured for temperature ranging from 100 to 500 K. The measurement results
revealed that it is favorable to operate the LED at as low temperature as possible. The LEDs would produce stronger light
intensity at smaller biasing current at lower temperature. However, for LEDs with different colors, the temperature
dependence of the biasing current, light intensity and light chromatics are quite complicated and they are governed by the
band gap and defect levels of the devices. These observations should have valuable technical impact for better designs and
applications of color LED display panels.
Keywords - Light-Emitting Diode, Temperature Stability, Electroluminescence, Defect