Paper Title
NBTI Recovery Impact on PMOSFETS
Abstract
Negative Bias Temperature Instability (NBTI) had become one of the most significant device reliability subject
reported in this day and age. Not only does NBTI impose a big impact on circuit functionalities as well as product lifetimes, but
also becoming the prominent limiting factor for further CMOS technology scaling. Hence accurate characterization and
thorough understanding of NBTI is essential to follow or go beyond the Moore’s Law. Nonetheless the existence of NBTI
recovery becomes a huge obstruction to this effort; whereby fast reduction in the degradation of the device parameter occurs
after end of electrical stress. Moreover device characterization within the measurement stage further increases the NBTI
recovery corresponding to the increase in delay. For these reasons in this paper we investigate the recovery of NBTI at different
delay or relaxation periods, various pro-longed stress periods, a wide range of temperature dependency as well as the different
cycle or stages of NBTI recovery.
Keywords - Negative Bias Temperature Instability (NBTI); Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET);
NBTI Recovery, Reliability.