Paper Title :Study on INGAP/GAAS Collector-up HBTS with the Graphene Base for Power-Amplifier Applications

Author :Wei-Min Du, Hsien-Cheng Tseng

Article Citation :Wei-Min Du ,Hsien-Cheng Tseng , (2017 ) " Study on INGAP/GAAS Collector-up HBTS with the Graphene Base for Power-Amplifier Applications " , International Journal of Electrical, Electronics and Data Communication (IJEEDC) , pp. 77-80, Volume-5,Issue-8

Abstract : In this work, the characteristics of novel InGaP/GaAs collector-up heterojunction bipolar transistors with the graphene base and the nonuniform doped collector are demonstrated, and performances of the novel HBTs have been compared with the conventional InGaP/GaAs HBTs with various collector structures and thermal schemes. As compared to the conventional HBTs, the studied C-up HBTs exhibited better current-driving capability and higher RF efficiency. Note that the pnp device displayed greater thermal stability enhancement, which are distinct and reproducible, than the n-p-n device. The comparison results, based on pragmatic observations from the C-up HBTs without relatively large heatdissipation configurations, should be very useful for the reliable and the cost-effective design as small-scale power amplifiers in the wideband CDMA (W-CDMA) system. Keywords- Collector-Up, Graphene, Heterojunction Bipolar Transistors, Power Amplifiers, Thermal Stability.

Type : Research paper

Published : Volume-5,Issue-8

	|		PDF	|	Viewed - 68	|	Published on 2017-10-21