International Journal of Electrical, Electronics and Data Communication (IJEEDC)
eISSN:2320-2084 , pISSN:2321-2950
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Jan. 2021
Submitted Papers : 80
Accepted Papers : 10
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Acc. Perc : 12%
Issue Published : 93
Paper Published : 1465
No. of Authors : 3971
  Journal Paper

Paper Title
Switching Speed Of Cylindrical Surrounding Double-Gate Mosfet For Nanotechnology

In nanotechnology, the switching devices have a vital role. These switching devices may be of diode, transistor etc. The Metal Oxide Semiconductor Field Effect Transistor (MOSFETs) are better switching device as compared to others. In this present research, switching speed has been analyzed with the help of a proposed model of Cylindrical Surrounding Double-Gate (CSDG) MOSFET. This can be used to select the signal from antennas for transmitting / receiving processes and other applications in nanotechnology sensors with the emphasis on the switching speed. It has the advantages of higher switching speed for the various switching circuit application of nanotechnology and radio-frequency technology compared to the Double-Gate (DG) MOSFET and some other traditional switching devices. The scaling of the device has been taken with care in this analysis. Keywords— CSDG MOSFET, Double-gate MOSFET; Nanotechnology; Nano-devices; Switch model; Switching speed; VLSI.

Author - Viranjay M. Srivastava

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| Published on 2016-06-04
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