IJEEDC Analysis of Band gap Design and I-V Characteristic of p-ZnCdSe/n-ZnCdSeLight Emitting Diode (LED)

Journal Paper

Paper Title :Analysis of Band gap Design and I-V Characteristic of p-ZnCdSe/n-ZnCdSeLight Emitting Diode (LED)

Author :Khin Ohmar Lin, Maung Aye, Tin Tin Hla

Article Citation :Khin Ohmar Lin ,Maung Aye ,Tin Tin Hla , (2024 ) " Analysis of Band gap Design and I-V Characteristic of p-ZnCdSe/n-ZnCdSeLight Emitting Diode (LED) " , International Journal of Electrical, Electronics and Data Communication (IJEEDC) , pp. 15-19, Volume-12,Issue-8

Abstract : The paper is emphasized on the analysis of bandgap design and I-V characteristic of p-ZnCdSe/n-ZnCdSe LED at room temperature (300K) in detail. The LED model is designed by computer-based simulation using the related theories of semiconductor physics. The bandgap design results are approved by the parameters of the materials such as doping concentrations, effective mass of the materials, contact potential and so on. The characteristic curves are highlighted by mathematical equations with MATLAB program. This wide gap material, ZnCdSe has the many advantage for the optical electronic devices such as LED, laser diode, photo diode, etc. This research paper gives the helps and reference information for the new researchers in optoelectronic semiconductor field. Keywords - ZnCdSe, LED, Band gap Design, I-V Characteristic curve, MATLAB.

Type : Research paper

Published : Volume-12,Issue-8


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Apr. 2025
Submitted Papers	:	80
Accepted Papers	:	10
Rejected Papers	:	70
Acc. Perc	:	12%
Issue Published	:	143
Paper Published	:	1781
No. of Authors	:	4956

Published : Volume-12,Issue-8

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