International Journal of Electrical, Electronics and Data Communication (IJEEDC)
eISSN:2320-2084 , pISSN:2321-2950
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Statistics report
Jun. 2023
Submitted Papers : 80
Accepted Papers : 10
Rejected Papers : 70
Acc. Perc : 12%
Issue Published : 123
Paper Published : 1646
No. of Authors : 4516
  Journal Paper

Paper Title :
Design of Power MOSFET based on Physical Parameters

Author :Thee Ei Khaing Shwe, Mya Mya Aye, Myint Myint Than, Win Kay Khaing, Hla Myo Tun

Article Citation :Thee Ei Khaing Shwe ,Mya Mya Aye ,Myint Myint Than ,Win Kay Khaing ,Hla Myo Tun , (2020 ) " Design of Power MOSFET based on Physical Parameters " , International Journal of Electrical, Electronics and Data Communication (IJEEDC) , pp. 13-15, Volume-8,Issue-7

Abstract : The paper presents the power MOSFET design based on physical parameters. At the first portion of this work, the proposed model of MOSFET structure was designed with group III-V compound. After that the biasing mode was considered for switching stage of that MOSFET. The transition layer for that transistor design was implemented based on that of physical parameters. The numerical analyses are completed before selecting the channel material. The suitable material for channel layer might be oxide materials. According to the parameter selection process, the developed MOSFET structure was established for high power applications. The results confirmed that the analyses on that MOSFET are suitable for real world applications. Keywords - Power MOSFET, Group III-V Compound, Numerical Analyses, Physical Parameters, MATLAB.

Type : Research paper

Published : Volume-8,Issue-7


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