International Journal of Electrical, Electronics and Data Communication (IJEEDC)
eISSN:2320-2084 , pISSN:2321-2950
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Statistics report
Mar. 2020
Submitted Papers : 80
Accepted Papers : 10
Rejected Papers : 70
Acc. Perc : 12%
Issue Published : 85
Paper Published : 1402
No. of Authors : 3795
  Journal Paper

Paper Title
Analysis of Current-Voltage Characteristics and Band-Gap Energy for GaAs-Based MOSFET

This paper is emphasized on the analysis of computer-based simulation for MOSFET in relation with the currentvoltage characteristics and band structure design. The research is emphasized by gallium arsenide based device with aluminium metal contact. The characteristic curves are highlighted by mathematical equations with MATLAB program. The band-diagram results are approved by the parameters of the materials such as work function, doping concentrations, effective mass of the materials, contact potential and so on. This paper will help the researchers who analyze the characteristics and properties of a metal-oxide semiconductor field effect transistor. Keywords - Band Structure, MOSFET, Gallium Arsenide, Metal, MATLAB.

Author - Wuthmonekyaw, Tin Tinhla

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| Published on 2019-08-16
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