International Journal of Electrical, Electronics and Data Communication (IJEEDC)
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Volume-8,Issue-1  ( Jan, 2020 )
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Statistics report
Apr. 2020
Submitted Papers : 80
Accepted Papers : 10
Rejected Papers : 70
Acc. Perc : 12%
Issue Published : 85
Paper Published : 1402
No. of Authors : 3795
  Journal Paper

Paper Title
Analysis of High N-Conductivity in Ga2o3 Thin Films – The Effect of Surface Electric Field

Abstract
High election conductivity obtained in .Ga2O3 thin films is analyzed. By means of thermodynamic analyses a of concentrational equilibrium of native point defect and free charge carriers we showed that it is impossible to obtain high native conductivity in bulk material. Electric filed at the surface is strong enough to provide localization of electrons in near surface region. Electronic states are discrete, which can explain high mobility of carriers observed in experiment. Keywords- oxide semiconductors, compensation of conductivity, surface conductivity


Author - Tamar Tchelidze, Tinatin Tsiskaridze, Bachana Beradze

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| Published on 2019-06-24
   
   
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