Paper Title :Luminescence Lifetime Measurement on Gaas Material for Optoelectronic Devices

Author :Kathy Kyaw Min, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe

Article Citation :Kathy Kyaw Min ,Hla Myo Tun ,Zaw Min Naing ,Win Khaing Moe , (2018 ) " Luminescence Lifetime Measurement on Gaas Material for Optoelectronic Devices " , International Journal of Electrical, Electronics and Data Communication (IJEEDC) , pp. 11-14, Volume-6,Issue-4

Abstract : The paper presents the lifetime measurement on GaAs material for optoelectronic devices. The energy dispersion of GaAs is considered for analyzing the material characteristics and Fermi-dirac function for that material for performance evaluation for optoelectronic devices. And then we investigated the energy bandgap of GaAs, Si, and Geas a function of temperature for confirmation. The lifetime measurements for GaAs material with 2.32-2.42eV with 267nm and 400nm wavelength and 2.53-2.63eV with 267nm and 400nm wavelength with time-resolved photoluminescence measurement with the help of MATLAB are analyzed in this paper. The simulation results have been confirmed by the experimental results for measurements. Index terms - Lifetime Measurement, GaAs Material, Optoelectronic Devices, MATLAB, Band Structure Engineering, Fermi-Dirac Function.

Type : Research paper

Published : Volume-6,Issue-4

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