Two Inputs XOR Logic Gate Using Cross Phase Modulation Technique at Bit-Rate of 10 GBIT/S
The aim of this work is to demonstrate the realization of two inputs XOR logic gate using cross phase modulation
technique. A simple design for the proposed logic gate is suggested. The proposed scheme differs from the previous
conventional systems as utilizing commercial traveling wave semiconductor optical amplifiers (TW-SOAs) rather than using
erbium-doped fiber amplifier (EDFA) that leads to degrade system performance due to the increasing of its amplified
spontaneous emission (ASE). Based on optimization study, the simulation results including bit error rate and Quality-factor
are calculated. BER performance of about 10-14 at 10 Gbit/s is achieved. A clear eye diagram for the proposed optical logic
gate is displayed for different cases of power levels.
Index terms- Cross phase modulation, Traveling wave semiconductor optical amplifier, Bit-error rate, Quality-factor,
Erbium Doped Fiber Amplifier, Extinction Ratio.