Design of Power MOSFET based on Physical Parameters
The paper presents the power MOSFET design based on physical parameters. At the first portion of this work, the
proposed model of MOSFET structure was designed with group III-V compound. After that the biasing mode was
considered for switching stage of that MOSFET. The transition layer for that transistor design was implemented based on
that of physical parameters. The numerical analyses are completed before selecting the channel material. The suitable
material for channel layer might be oxide materials. According to the parameter selection process, the developed MOSFET
structure was established for high power applications. The results confirmed that the analyses on that MOSFET are suitable
for real world applications.
Keywords - Power MOSFET, Group III-V Compound, Numerical Analyses, Physical Parameters, MATLAB.