Paper Title
The Fabrication And Characterization Of Uv Sensor Based On Tio2 Nanorods Array On Silicon Substrate Heterojunction

A structure for ultraviolet (UV) photosensor based on rutile TiO2 nanorods (NRs) grown on p-type (111) - oriented silicon substrate seeded with a TiO2 layer synthesized by radio-frequency (RF) reactive magnetron sputtering has been fabricated. Chemical bath deposition (CBD) was carried out to grow rutile TiO2 NRs on Si substrate. The structural and optical properties of the sample were reported by X-ray diffraction (XRD) and field emission-scanning electron microscopy (FESEM) analyses. Results showed the tetragonal rutile structure of the synthesized TiO2 NRs. Optical properties were further examined by photoluminescence spectroscopy, and a high-intensity UV peak centered at around 366 nm compared with visible defect peaks centered at 436 and 716 nm was observed. Upon exposure to 365 nm light (2.3 mW cm -2 ) at 5V bias voltage, the device showed 62.8 × 102 sensitivity. In addition, the internal gain of the photosensor was 63.8, and the photoresponse peak was 467 mAW-1 . Furthermore, the photocurrent was 6.7 × 10-4 A. The response and the recovery times were calculated to be 48 and 40 ms, respectively, upon illumination to a pulsed UV light (365 nm) at 5V bias voltage. All of these results demonstrate that this high-quality photosensor can be a promising candidate as a low-cost UV photodetector for commercially integrated photoelectronic applications. Keywords- CBD, Nanorods, Rutile TiO2, UV Photosensor.