Paper Title
Comparative Study of Temperature Characteristics of Color GAN Light-Emitting Diodes

Temperature dependent light-emitting and current-voltage characteristics of multi-quantum well (MQW) InGaN/GaN LEDs in different colors were measured for temperature ranging from 100 to 500 K. The measurement results revealed that it is favorable to operate the LED at as low temperature as possible. The LEDs would produce stronger light intensity at smaller biasing current at lower temperature. However, for LEDs with different colors, the temperature dependence of the biasing current, light intensity and light chromatics are quite complicated and they are governed by the band gap and defect levels of the devices. These observations should have valuable technical impact for better designs and applications of color LED display panels. Keywords - Light-Emitting Diode, Temperature Stability, Electroluminescence, Defect