Analysis of Current-Voltage Characteristics and Band-Gap Energy for GaAs-Based MOSFET
This paper is emphasized on the analysis of computer-based simulation for MOSFET in relation with the currentvoltage
characteristics and band structure design. The research is emphasized by gallium arsenide based device with
aluminium metal contact. The characteristic curves are highlighted by mathematical equations with MATLAB program. The
band-diagram results are approved by the parameters of the materials such as work function, doping concentrations, effective
mass of the materials, contact potential and so on. This paper will help the researchers who analyze the characteristics and
properties of a metal-oxide semiconductor field effect transistor.
Keywords - Band Structure, MOSFET, Gallium Arsenide, Metal, MATLAB.