Analysis of High N-Conductivity in Ga2o3 Thin Films – The Effect of Surface Electric Field
High election conductivity obtained in .Ga2O3 thin films is analyzed. By means of thermodynamic analyses a of
concentrational equilibrium of native point defect and free charge carriers we showed that it is impossible to obtain high
native conductivity in bulk material. Electric filed at the surface is strong enough to provide localization of electrons in near
surface region. Electronic states are discrete, which can explain high mobility of carriers observed in experiment.
Keywords- oxide semiconductors, compensation of conductivity, surface conductivity