Paper Title
Finfet Based Sram Design For Low Power Applications
Abstract
Abstract- Industry demands Low-Power and High- Performance devices now-a-days. Among the various embedded
memory technologies, SRAM provides the highest performance along with low standby power consumption. In CMOS
circuits, high leakage current in deep-submicron regimes is becoming a significant contributor to power dissipation due to
reduction in threshold voltage, channel length, and gate oxide thickness. FinFET based SRAM design can be used as an
alternative solution to the bulk devices. FinFET is suitable for nanoscale memory circuits design due to its reduced Short
Channel Effects (SCE) and leakage current. As the impact of process variations become increasingly significant in ultra deep
submicron technologies, FinFETs are becoming increasingly popular a contender for replacement of bulk FETs due to
favorable device characteristics.The paper focuses on study of various design aspects of FinFET based SRAM